8PA60N06AA-G mosfet equivalent, silicon n-channel power mosfet.
l Fast Switching l Low ON Resistance l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test l Halogen Free
Applications：
Power .
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
VDSS
ID
.
8PA60N06 AA-G, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the high density Trench technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various p.
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